PRODUCT
E beam evaporator
SEE-UHV
SPECIFICATIONS
| Deposition materials | Metal : Ag, Al, Au, Cu, Sn, Ti, Pt, Ge, Ni, Au,.. Oxide : SiO2, TiO2, Al2O3, Ta2O5,… |
|---|---|
| Substrate size | Max. 4 inch |
| Product yield | 1 wafers/run@4inch |
| E-beam gun | 6ccx4pk |
| E-beam power supply | 6Kw |
| Pocket selector | 4 pocket indexer |
| Beam sweep controller | Digital sweep control |
| Thickness controller | Single Q’tz crystal sensor |
| Ultimate pressure | < 2.0E-9 Torr (Cryo pump ) |
| Loadlock chamber pressure | < 5.0E-6 Torr (TMP ) |
| Control | PC control (UPRO software) |
| Option | Ion source, Sputter gun, substrate cooling- tilting & rotation, Substrate temperature max. 700℃ |
| Dimension (W*D*H) | 3,000mm X 800mm X 1,700mm |