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PECVD
SPUTTER
DRY ETCHER
PECVD
ALD
E beam evaporator
Thermal Evaporator
Glovebox+PVD
2D material CVD
LPCVD & Furnace
Vacuum Sintering Furnace
RTP
Plasma Doping (PDS)
ASHER
Wet bench
Crystal Si solarcell
SPUTTER
DRY ETCHER
PECVD
ALD
E beam evaporator
Thermal Evaporator
Glovebox+PVD
2D material CVD
LPCVD & Furnace
Vacuum Sintering Furnace
RTP
Plasma Doping (PDS)
ASHER
Wet bench
Crystal Si solarcell
SPUTTER
DRY ETCHER
PECVD
ALD
E beam evaporator
Thermal Evaporator
Glovebox+PVD
2D material CVD
LPCVD & Furnace
Vacuum Sintering Furnace
RTP
Plasma Doping (PDS)
ASHER
Wet bench
Crystal Si solarcell
PECVD
PRODUCT
INTRODUCTION
Process Data (Si3N4)
Reflective Index of Si3N4 film (@ SiH4 80sccm : NH3 gas variation)
Wet etching data of Si3N4 film (@ temperature variation)
Process Data (SiO2)
Deposition rate & Uniformity of SiO2 film (@ N2O gas variation)
Deposition rate & Uniformity of SiO2 film (@ RF power variation)
Thickness 2um SiO2 deposition process
6 inch Si wafer
SiH4 (sccm)
O2 (sccm)
Ar (sccm)
Pressure (mTorr)
RF Power (W)
Process Time (min)
27
30
50
9
900
22min
COSMOS -150
COSMOS -150
COSMOS –L200
COSMOS –L200
COSMOS –ICP
COSMOS –ICP
1
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COMPANY
Overview
History
Certification Status
Product Application
Contact Us
PRODUCT
SPUTTER
DRY ETCHER
PECVD
ALD
E beam evaporator
Thermal Evaporator
Glovebox+PVD
2D material CVD
LPCVD & Furnace
Vacuum Sintering Furnace
RTP
Plasma Doping (PDS)
ASHER
Wet bench
Crystal Si solarcell
RECRUIT
Type of Talent
Recruitment Guide
Recruitment Bulletin
PARTNERSHIP
Partnership
SUPPORT
Notice
Consultation Inquiry
Press Release
