PRODUCT
Plasma Doping (PDS)
Plasma Doping
SPECIFICATIONS
| Process | N+ doping P+ doping * SiO2 deposition & etching to prevent cross contamination |
|---|---|
| Substrate Size | Piece to Max. 6 inch |
| Plasma Source | ICP |
| Pulsed high voltage power to substrate | Output Voltage : - 500 ~ -5kV Pulse width : 10 ~ 100 [μsec] Output Frequency : 0 ~ 1 KHz |
| RF power | 600W @13.56Mhz |
| Ultimate pressure | < 5.0×10-6 Torr |
| Pump | Dry pump |
| Loadlock chamber | 1 wafer |
| Gas Supply | PH3, B2H6, Ar, CHF3 , SiH4, O2 |
| Dose | 5 X 1012 cm-2 ~ 1 X 1014 cm-2 |
| System control | PC control (full auto) |
| Dimension (w*d*h) | 1,860mm*850mm*2,000mm |