PRODUCT

ASHER

EURA-W

SPECIFICATIONS

Process Ashing, Descum, PR strip, Plasma cleaning,…
Substrate Size Piece to Max. 12 inch
Source injection Two pattern showerhead
Substrate temperature Cooling or Max. 300℃ (@ wafer)
RF power 2KW @13.56Mhz
Ultimate pressure < 5.0×10-3 Torr
Pump Dry pump or Rotary pump
Gas Supply Ar, O2,..etc
Deposition uniformity ≤ ±5 %
System control PC control
Dimension (w*d*h) 800mm*800mm*1,150mm