PRODUCT
DRY ETCHER
PERI-L Series
SPECIFICATIONS
| Application | Metal & Dielectric material etching |
|---|---|
| Etching material | SiO2, Si3N4, Si, Al, GaN, HfO2, Al2O3,Graphene,… |
| Substrate size | Piece ~ 12inch |
| Product yield | 15 wafers/run |
| Source(gas) injection type | Dual patterned showerhead type |
| Power supply | RF power Max. 2Kw@13.56MHz (with RF matching network) |
| Ultimate pressure | < 5.0E-3 Torr |
| Pressure control | Auto pressure control (throttle valve, baratron gauge) |
| Loadlock chamber | Ultimate pressure : < 5.0E-3Torr (Dry pump or Rotary pump ) |
| Gas delivery | SF6, CHF3, CF4, C4F8, BCl3,Cl2O2, Ar, He,… |
| Vacuum pump | Dry pump or Rotary pump |
| Control | PC control (UPRO software) |
| Option | TMP, Loadlock chamber |